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SI7172DP-T1-GE3 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI7172DP-T1-GE3 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
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2 / 9 page  www.vishay.com 2 Document Number: 68763 S-81730-Rev. A, 04-Aug-08 Vishay Siliconix Si7172DP New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 1 mA 200 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 207 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 9.1 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 24 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 200 V, VGS = 0 V 1 µA VDS = 200 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 20 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 5.9 A 0.058 0.070 Ω VGS = 6 V, ID = 5.7 A 0.063 0.076 Forward Transconductancea gfs VDS = 15 V, ID = 5.9 A 19 S Dynamicb Input Capacitance Ciss VDS = 100 V, VGS = 0 V, f = 1 MHz 2250 pF Output Capacitance Coss 115 Reverse Transfer Capacitance Crss 61 Total Gate Charge Qg VDS = 100 V, VGS = 10 V, ID = 5.9 A 51 77 nC VDS = 100 V, VGS = 6 V, ID = 5.9 A 34 51 Gate-Source Charge Qgs 14 Gate-Drain Charge Qgd 15.5 Gate Resistance Rg f = 1 MHz 1.0 2.0 Ω Turn-On Delay Time td(on) VDD = 100 V, RL = 20.8 Ω ID ≅ 4.8 A, VGEN = 6 V, Rg = 1 Ω 22 33 ns Rise Time tr 12 18 Turn-Off Delay Time td(off) 24 36 Fall Time tf 10 20 Turn-On Delay Time td(on) VDD = 100 V, RL = 20.8 Ω ID ≅ 4.8 A, VGEN = 10 V, Rg = 1 Ω 15 23 Rise Time tr 11 20 Turn-Off Delay Time td(off) 26 39 Fall Time tf 918 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 30 A Pulse Diode Forward Currenta ISM 30 Body Diode Voltage VSD IS = 4.8 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 4.8 A, dI/dt = 100 A/µs, TJ = 25 °C 80 120 ns Body Diode Reverse Recovery Charge Qrr 275 413 nC Reverse Recovery Fall Time ta 60 ns Reverse Recovery Rise Time tb 20 |
Podobny numer części - SI7172DP-T1-GE3 |
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Podobny opis - SI7172DP-T1-GE3 |
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