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FQPF9N90C Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części FQPF9N90C
Szczegółowy opis  N-Channel QFET MOSFET 900 V, 8.0 A, 1.4 Ohm
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FQPF9N90C Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor®’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
Features
• 8 A, 900V, RDS(on) = 1.4 Ω @VGS = 10 V, ID = 4 A
• Low
Gate Charge (Typ. 45 nC)
• Low Crss (
Typ. 14 pF)
• 100%
Avalanche Tested
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FQP9N90C
FQPF9N90C
Unit
VDSS
Drain-Source Voltage
900
V
ID
Drain Current
- Continuous (TC = 25°C)
8.0
8.0 *
A
- Continuous (TC = 100°C)
2.8
2.8 *
A
IDM
Drain Current
- Pulsed
(Note 1)
32
32 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
900
mJ
IAR
Avalanche Current
(Note 1)
8.0
A
EAR
Repetitive Avalanche Energy
(Note 1)
20.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.0
V/ns
PD
Power Dissipation (TC = 25°C)
205
68
W
- Derate above 25°C
1.64
0.54
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
FQP9N90C
FQPF9N90C
Unit
RθJC
Thermal Resistance, Junction-to-Case
0.61
1.85
°C/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
G
S
D
TO-220F
G
S
D
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D
G
March 2013
FQ
P9N90C / FQPF9N90C
N-Channel QFET® MOSFET
900 V, 8.0 A, 1.4 Ω
©2003 Fairchild Semiconductor Corporation
FQP9N90C / FQPF9N90C Rev. C0
www.fairchildsemi.com


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