FQD18N20V2TM datasheet(2/9 Pages) FAIRCHILD

Numer części	FQD18N20V2TM

Szczegółowy opis	N-Channel QFET MOSFET 200 V, 15 A, 140 mOhm

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Producent	FAIRCHILD [Fairchild Semiconductor]

Strona internetowa	http://www.fairchildsemi.com

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Electrical Characteristics

TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 1.58mH, IAS = 18A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%

5. Essentially independent of operating temperature

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Off Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

200

--

V

∆BVDSS

/

∆TJ

Breakdown Voltage Temperature

Coefficient

ID = 250 µA, Referenced to 25°C

--

0.25

--

V/°C

IDSS

Zero Gate Voltage Drain Current

VDS = 200 V, VGS = 0 V

--

1

µA

VDS = 160 V, TC = 125°C

--

10

µA

IGSSF

Gate-Body Leakage Current, Forward

VGS = 30 V, VDS = 0 V

--

100

nA

IGSSR

Gate-Body Leakage Current, Reverse

VGS = -30 V, VDS = 0 V

--

-100

nA

On Characteristics

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

3.0

--

5.0

V

RDS(on)

Static Drain-Source

On-Resistance

VGS = 10 V, ID = 7.5 A

--

0.12

0.14

Ω

gFS

Forward Transconductance

VDS = 40 V, ID = 7.5 A

(Note 4)

--

11

--

S

Dynamic Characteristics

Ciss

Input Capacitance

VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

--

830

1080

pF

Coss

Output Capacitance

--

200

260

pF

Crss

Reverse Transfer Capacitance

--

25

33

pF

Coss

Output Capacitance

VDS = 160 V, VGS = 0 V,

f = 1.0 MHz

--

70

--

pF

Coss eff. Effective Output Capacitance

VDS = 0V to 160 V, VGS = 0 V

--

135

--

pF

Switching Characteristics

td(on)

Turn-On Delay Time

VDD = 100 V, ID = 18 A,

RG = 25 Ω

(Note 4, 5)

--

16

40

ns

tr

Turn-On Rise Time

--

133

275

ns

td(off)

Turn-Off Delay Time

--

38

85

ns

tf

Turn-Off Fall Time

--

62

135

ns

Qg

Total Gate Charge

VDS = 160 V, ID = 18 A,

VGS = 10 V

(Note 4, 5)

--

20

26

nC

Qgs

Gate-Source Charge

--

5.6

--

nC

Qgd

Gate-Drain Charge

--

10

--

nC

Drain-Source Diode Characteristics and Maximum Ratings

IS

Maximum Continuous Drain-Source Diode Forward Current

--

15

A

ISM

Maximum Pulsed Drain-Source Diode Forward Current

--

60

A

VSD

Drain-Source Diode Forward Voltage

VGS = 0 V, IS = 15 A

--

1.5

V

trr

Reverse Recovery Time

VGS = 0 V, IS = 18 A,

dIF / dt = 100 A/µs

(Note 4)

--

158

--

ns

Qrr

Reverse Recovery Charge

--

1.0

--

µC

FQD18N20V2 / FQU18N20V2 Rev. C0

www.fairchildsemi.com

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