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2PB709BSL Arkusz danych(PDF) 6 Page - NXP Semiconductors |
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6 / 13 page 2PB709BRL_2PB709BSL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 28 June 2010 6 of 13 NXP Semiconductors 2PB709BRL; 2PB709BSL 50 V, 200 mA PNP general-purpose transistors VCE = −10 V (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Tamb =25 °C Fig 6. 2PB709BSL: DC current gain as a function of collector current; typical values Fig 7. 2PB709BSL: Collector current as a function of collector-emitter voltage; typical values IC/IB = 10 (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 8. 2PB709BSL: Collector-emitter saturation voltage as a function of collector current; typical values 006aac460 200 400 600 hFE 0 IC (mA) −10−1 −103 −102 −1 −10 (1) (3) (2) VCE (V) 0.0 −10.0 −8.0 −4.0 −6.0 −2.0 006aac461 −0.04 −0.08 −0.12 IC (A) 0.0 IB (mA) = −0.75 −0.7 −0.65 −0.55 −0.45 −0.35 −0.25 −0.15 −0.05 −0.6 −0.5 −0.4 −0.3 −0.2 −0.1 006aac462 IC (mA) −10−1 −103 −102 −1 −10 −10−1 −1 VCEsat (V) −10−2 (1) (2) (3) |
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