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BAS16LD Arkusz danych(PDF) 5 Page - NXP Semiconductors |
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BAS16LD Arkusz danych(HTML) 5 Page - NXP Semiconductors |
5 / 11 page BAS16LD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 12 October 2010 5 of 11 NXP Semiconductors BAS16LD Single high-speed switching diode (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C Based on square wave currents. Tj =25 °C; prior to surge Fig 2. Forward current as a function of forward voltage; typical values Fig 3. Non-repetitive peak forward current as a function of pulse duration; maximum values (1) Tamb = 150 °C (2) Tamb =85 °C (3) Tamb =25 °C (4) Tamb = −40 °C f=1MHz; Tamb =25 °C Fig 4. Reverse current as a function of reverse voltage; typical values Fig 5. Diode capacitance as a function of reverse voltage; typical values 006aab132 1 10 102 103 IF (mA) 10−1 VF (V) 0 1.4 1.0 0.4 0.8 0.2 1.2 0.6 (1) (2) (3) (4) mbg704 10 1 102 IFSM (A) 10−1 tp (μs) 1104 103 10 102 006aab133 102 IR ( μA) VR (V) 0 100 80 40 60 20 10 1 10−1 10−2 10−3 10−4 10−5 (1) (2) (3) (4) 08 16 12 4 0.8 0.6 0 0.4 0.2 mbg446 VR (V) Cd (pF) |
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