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STP6N62K3 Arkusz danych(PDF) 8 Page - STMicroelectronics |
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STP6N62K3 Arkusz danych(HTML) 8 Page - STMicroelectronics |
8 / 19 page Electrical characteristics STF6N62K3, STFI6N62K3, STI6N62K3, STP6N62K3, STU6N62K3 8/19 Doc ID 14676 Rev 4 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on-resistance vs temperature Figure 16. Normalized BVDSS vs temperature Figure 17. Source-drain diode forward characteristics Figure 18. Maximum avalanche energy vs temperature VGS(th) 1.00 0.90 0.80 0.70 -75 TJ(°C) (norm) -25 1.10 75 25 125 ID=50µA AM09061v1 RDS(on) 2.0 1.5 1.0 0.5 -75 TJ(°C) (norm) -25 75 25 125 0.0 2.5 ID=2.8A VGS=10V AM09062v1 BVDSS -75 TJ(°C) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 ID=1mA AM09060v1 VSD 0 2 ISD(A) (V) 1 5 3 4 0 0.2 0.4 0.6 0.8 1.0 TJ=25°C TJ=150°C TJ=-50°C 6 AM09063v1 EAS 0 40 TJ(°C) (mJ) 20 100 60 80 0 20 40 60 80 120 140 100 120 140 160 ID=5.5 A VDD=50 V AM09064v1 |
Podobny numer części - STP6N62K3 |
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Podobny opis - STP6N62K3 |
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