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74HCT1G86GW Arkusz danych(PDF) 5 Page - NXP Semiconductors

Numer części 74HCT1G86GW
Szczegółowy opis  2-input EXCLUSIVE-OR gate
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74HCT1G86GW Arkusz danych(HTML) 5 Page - NXP Semiconductors

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74HC_HCT1G86_4
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 04 — 20 July 2007
5 of 11
NXP Semiconductors
74HC1G86; 74HCT1G86
2-input EXCLUSIVE-OR gate
11. Dynamic characteristics
[1]
tpd is the same as tPLH and tPHL.
[2]
CPD is used to determine the dynamic power dissipation PD (µW).
PD =CPD × VCC2 × fi + ∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
∑ (C
L × VCC
2
× f
o) = sum of outputs
ICC
supply current
VI =VCC or GND; IO =0A;
VCC = 5.5 V
-
-
10
-
20
µA
∆ICC
additional supply
current
per input; VCC = 4.5 V to 5.5 V;
VI =VCC − 2.1 V; IO =0A
-
-
500
-
850
µA
CI
input capacitance
-
1.5
-
-
-
pF
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb =25 °C.
Symbol
Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C
Unit
Min
Typ
Max
Min
Max
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf ≤ 6.0 ns; All typical values are measured at Tamb =25 °C. For test circuit see Figure 6
Symbol Parameter
Conditions
−40 °C to +85 °C
−40 °C to +125 °C Unit
Min
Typ
Max
Min
Max
For type 74HC1G86
tpd
propagation delay A and B to Y; see Figure 5
[1]
VCC = 2.0 V; CL = 50 pF
-
22
115
-
135
ns
VCC = 4.5 V; CL = 50 pF
-
11
23
-
27
ns
VCC = 5.0 V; CL =15pF
-
9
-
-
-
ns
VCC = 6.0 V; CL =50pF
-
9
20
-
23
ns
CPD
power dissipation
capacitance
VI = GND to VCC
[2]
-23-
-
-
pF
For type 74HCT1G86
tpd
propagation delay A and B to Y; see Figure 5
[1]
VCC = 4.5 V; CL = 50 pF
-
13
23
-
27
ns
VCC = 5.0 V; CL =15pF
-
10
-
-
-
ns
CPD
power dissipation
capacitance
VI = GND to VCC − 1.5 V
[2]
-23-
-
-
pF


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