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SI2333DDS-T1-GE3 Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI2333DDS-T1-GE3 Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 63861 S12-0801-Rev. A, 16-Apr-12 Vishay Siliconix Si2333DDS This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 For technical support, please contact: pmostechsupport@vishay.com TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 V SD - Source-to-Drain Voltage (V) T J = 150 °C T J = 25 °C 0.3 0.45 0.6 0.75 0.9 - 50 - 25 0 25 50 75 100 125 150 T J - Temperature (°C) I D = 250 μA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.01 0.025 0.04 0.055 0.07 1 2 3 4 5 V GS - Gate-to-Source Voltage (V) T J = 125 °C T J = 25 °C I D = 5 A 0 10 20 30 0.001 0.01 0.1 1 10 100 Time (s) Safe Operating Area 0.01 0.1 1 10 0.1 1 10 100 V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified 100 ms Limited by R DS(on)* 1 ms T C = 25 °C Single Pulse BVDSS Limited 10 ms 100 μs 1 s DC 10 s 100 |
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