Zakładka z wyszukiwarką danych komponentów |
|
HUFA76407P3 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
|
HUFA76407P3 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page ©2001 Fairchild Semiconductor Corporation HUFA76407P3 Rev. B ] Electrical Specifications TC = 25 oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 12) 60 - - V ID = 250µA, VGS = 0V , TC = -40 oC (Figure 12) 55 - - V Zero Gate Voltage Drain Current IDSS VDS = 55V, VGS = 0V - - 1 µA VDS = 50V, VGS = 0V, TC = 150 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±16V - - ±100 nA ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 13A, VGS = 10V (Figures 9, 10) - 0.077 0.092 Ω ID = 8A, VGS = 5V (Figure 9) - 0.095 0.107 Ω ID = 8A, VGS = 4.5V (Figure 9) - 0.107 0.117 Ω THERMAL SPECIFICATIONS Thermal Resistance Junction to Case RθJC TO-220 - - 3.94 oC/W Thermal Resistance Junction to Ambient RθJA -- 62 oC/W SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON VDD = 30V, ID = 8A VGS = 4.5V, RGS = 32Ω (Figures 15, 21, 22) - - 170 ns Turn-On Delay Time td(ON) -8 - ns Rise Time tr - 105 - ns Turn-Off Delay Time td(OFF) -22- ns Fall Time tf -39- ns Turn-Off Time tOFF - - 92 ns SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON VDD = 30V, ID = 13A VGS = 10V, RGS = 32Ω (Figures 16, 21, 22) - - 56 ns Turn-On Delay Time td(ON) -5 - ns Rise Time tr -32- ns Turn-Off Delay Time td(OFF) -43- ns Fall Time tf - 45 - ns Turn-Off Time tOFF - - 132 ns GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 30V, ID = 8A, Ig(REF) = 1.0mA (Figures 14, 19, 20) - 9.4 11.3 nC Gate Charge at 5V Qg(5) VGS = 0V to 5V - 5.2 6.2 nC Threshold Gate Charge Qg(TH) VGS = 0V to 1V - .36 .43 nC Gate to Source Gate Charge Qgs -1.2 - nC Gate to Drain “Miller” Charge Qgd -2.5 - nC CAPACITANCE SPECIFICATIONS Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) - 350 - pF Output Capacitance COSS - 105 - pF Reverse Transfer Capacitance CRSS -23- pF Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Source to Drain Diode Voltage VSD ISD = 8A - - 1.25 V ISD = 4A - - 1.0 V Reverse Recovery Time trr ISD = 8A, dISD/dt = 100A/µs- - 66 ns Reverse Recovered Charge QRR ISD = 8A, dISD/dt = 100A/µs - - 159 nC HUFA76407P3 |
Podobny numer części - HUFA76407P3 |
|
Podobny opis - HUFA76407P3 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |