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STFW60N65M5 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STFW60N65M5 Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 16 page STFW60N65M5, STW60N65M5 Electrical ratings Doc ID 18222 Rev 2 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-247 TO-3PF VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 46 A ID Drain current (continuous) at TC = 100 °C 29 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 184 A PTOT Total dissipation at TC = 25 °C 255 79 W IAR Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) 12 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 1400 mJ dv/dt (2) 2. ISD ≤ 46 A, di/dt ≤ 400 A/µs, VDD = 400 V, VPeak < V(BR)DSS Peak diode recovery voltage slope 15 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1s; Tc=25°C) 3500 V Tstg Storage temperature - 55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-247 TO-3PF Rthj-case Thermal resistance junction-case max 0.49 1.58 °C/W Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
Podobny numer części - STFW60N65M5 |
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Podobny opis - STFW60N65M5 |
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