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IRF7331PBF Arkusz danych(PDF) 2 Page - International Rectifier

Numer części IRF7331PBF
Szczegółowy opis  Ultra Low On-Resistance Dual N-Channel MOSFET
Download  9 Pages
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Producent  IRF [International Rectifier]
Strona internetowa  http://www.irf.com
Logo IRF - International Rectifier

IRF7331PBF Arkusz danych(HTML) 2 Page - International Rectifier

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IRF7331PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
––– –––
1.2
V
TJ = 25°C, IS = 2.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
31
47
ns
TJ = 25°C, IF = 2.0A
Qrr
Reverse Recovery Charge
–––
15
23
nC
di/dt = 100A/µs
‚
Source-Drain Ratings and Characteristics
A
28
–––
–––
–––
2.0
–––
 Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
ƒ Surface mounted on 1 in square Cu board
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.013 –––
V/°C Reference to 25°C, ID = 1mA
––– –––
30
VGS = 4.5V, ID = 7.0A
‚
––– –––
45
VGS = 2.5V, ID = 5.6A
‚
VGS(th)
Gate Threshold Voltage
0.6
–––
1.2
V
VDS = VGS, ID = 250µA
gfs
Forward Transconductance
14
–––
–––
S
VDS = 10V, ID = 7.0A
––– –––
1.0
VDS = 16V, VGS = 0V
––– –––
25
VDS = 16V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
––– –––
100
VGS = 12V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -12V
Qg
Total Gate Charge
–––
13
20
ID = 7.0A
Qgs
Gate-to-Source Charge
–––
3.7
–––
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
2.1
–––
VGS = 4.5V
td(on)
Turn-On Delay Time
–––
7.6
–––
VDD = 10V
‚
tr
Rise Time
–––
22
–––
ID = 1.0A
td(off)
Turn-Off Delay Time
––– 110
–––
RG = 53Ω
tf
Fall Time
–––
50
–––
VGS = 4.5V
Ciss
Input Capacitance
––– 1340 –––
VGS = 0V
Coss
Output Capacitance
––– 170
–––
pF
VDS = 16V
Crss
Reverse Transfer Capacitance
––– 120
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
m
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
S
D
G


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