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2N3019 Arkusz danych(PDF) 1 Page - Comset Semiconductor |
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2N3019 Arkusz danych(HTML) 1 Page - Comset Semiconductor |
1 / 4 page NPN 2N3019 – 2N3020 COMSET SEMICONDUCTORS 1/4 S SIIL LIIC CO ON N P PL LA AN NA AR R E EP PIIT TA AX XIIA AL L T TR RA AN NS SIIS ST TO OR RS S The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit VCEO Collector-Emitter Voltage 2N3019 80 V 2N3020 VCBO Collector-Base Voltage 2N3019 140 V 2N3020 VEBO Emitter-Base Voltage 2N3019 7 V 2N3020 IC Collector Current 2N3019 1 A 2N3020 PD Total Power Dissipation @ Tamb = 25° 2N3019 0.8 Watts 2N3020 PD Total Power Dissipation @ Tcase= 25° 2N3019 5 2N3020 TJ Junction Temperature 2N3019 200 °C 2N3020 TStg Storage Temperature range 2N3019 -65 to +200 °C 2N3020 THERMAL CHARACTERISTICS Symbol Ratings Value Unit RthJ-a Thermal Resistance, Junction to ambient in free air 2N3019 35 °C/W 2N3020 RthJ-c Thermal Resistance, Junction to case 2N3019 219 °C/W 2N3020 |
Podobny numer części - 2N3019 |
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Podobny opis - 2N3019 |
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