DATA SHEET

KM4212

2

REV. 1 August 2001

PARAMETERS

CONDITIONS

TYP

MIN & MAX

UNITS

NOTES

Case Temperature

+25°C

+25°C

Frequency Domain Response

-3dB bandwidth

6.5

MHz

1

3

MHz

full power bandwidth

2

MHz

gain bandwidth product

3.5

MHz

Time Domain Response

rise and fall time

0.2V step

55

ns

settling time to 0.1%

1V step

700

ns

overshoot

1V step,

7

%

slew rate

2V step

, G = -1

7

V/

µs

Distortion and Noise Response

2nd harmonic distortion

68

dBc

3rd harmonic distortion

65

dBc

THD

63

dB

input voltage noise

>10kHz

30

nV/

√Hz

crosstalk

0.01MHz

89

dB

DC Performance

input offset voltage

1

±5

mV

2

average drift

3

µV/°C

input bias current

90

250

nA

2

average drift

100

pA/°C

input offset current

2.1

100

nA

2

power supply rejection ratio

DC

63

58

dB

2

open loop gain

82

65

dB

2

quiescent current

62

95

µA2

Input Characteristics

input resistance

>10

M

Ω

input capacitance

1.4

pF

input common mode voltage range

-0.3 to 1.5

V

common mode rejection ratio

95

68

dB

2

Output Characteristics

output voltage swing

0.035 to 2.665 0.15 to 2.55

V

2

0.07 to 2.6

V

linear output current

±4

mA

short circuit output current

±9

mA

power supply operating range

2.7

2.5 to 5.5

V

Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels

are determined from tested parameters.

NOTES:

1) For G = +1, Rf = 0.

2) 100% tested at +25°C.

Absolute Maximum Ratings

Package Thermal Resistance

supply voltage

0 to +6V

Package

maximum junction temperature

+175°C

8 lead SOIC

152°C/W

storage temperature range

-65°C to +150°C

8 lead MSOP

206°C/W

lead temperature (10 sec)

+260°C

operating temperature range (recommended) -40°C to +85°C

input voltage range

internal power dissipation

see power derating curves