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KSB1149 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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KSB1149 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 Typical Characteristics Figure 1. Static Characteristic Figure 2. DC current Gain Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Figure 4. Forward Bias Safe Operating Area Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating -0 -1 -2 -3 -4 -5 -0 -1 -2 -3 -4 -5 IB=-900uA IB=-800uA IB=-700uA IB=-600uA IB=-500uA IB=-400uA IB=-300uA IB=-100uA IB=-200uA VCE[V], COLLECTOR-EMITTER VOLTAGE -0.01 -0.1 -1 -10 100 1000 10000 100000 VCE = -2V Pulsed IC[A], COLLECTOR CURRENT -0.1 -1 -10 -0.1 -1 -10 -100 Ic = 1000 IB Pulsed VCE(sat) VBE(sat) IC[A], COLLECTOR CURRENT -1 -10 -100 500 -0.01 -0.1 -1 -10 Tc=25 o C Single Pulse Ic(DC) Ic(Pulse) Di ssipat ion Li mite d 200m s 10m s VCE[V], COLLECTOR-EMITTER VOLTAGE 25 50 75 100 125 150 175 200 0 20 40 60 80 100 120 140 160 DI SS IP AT IO N LI M IT ED s/b LI MIT ED TC[ o C], CASE TEMPERATURE 0 25 50 75 100 125 150 175 0 5 10 15 20 TC[ o C], CASE TEMPERATURE |
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