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FQD5N60CTM Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FQD5N60CTM
Szczegółowy opis  N-Channel QFET MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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Electrical Characteristics T
C = 25°C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 18.9mH, IAS = 4.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 4.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
600
--
--
V
∆BV
DSS
/
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.6
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 600 V, VGS = 0 V
--
--
1
µA
VDS = 480 V, TC = 125°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
2.0
--
4.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.4 A
--
2.0
2.5
gFS
Forward Transconductance
VDS = 40 V, ID = 1.4 A
(Note 4)
--
4.7
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
515
670
pF
Coss
Output Capacitance
--
55
72
pF
Crss
Reverse Transfer Capacitance
--
6.5
8.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 300 V, ID = 4.5A,
RG = 25 Ω
(Note 4, 5)
--
10
30
ns
tr
Turn-On Rise Time
--
42
90
ns
td(off)
Turn-Off Delay Time
--
38
85
ns
tf
Turn-Off Fall Time
--
46
100
ns
Qg
Total Gate Charge
VDS = 480 V, ID = 4.5A,
VGS = 10 V
(Note 4, 5)
--
15
19
nC
Qgs
Gate-Source Charge
--
2.5
--
nC
Qgd
Gate-Drain Charge
--
6.6
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.8
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
11.2
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.8 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 4.5 A,
dIF / dt = 100 A/µs
(Note 4)
--
300
--
ns
Qrr
Reverse Recovery Charge
--
2.2
--
µC
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©20
03 Fairchild Semiconductor Corporation
FQD5N60C / FQU5N60C Rev. C0


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