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KSD1692 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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KSD1692 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Silicon Darlington Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted * PW ≤10ms, duty Cycle≤50% Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤350µs, duty Cycle≤2% Pulsed hFE Classificntion Sym- bol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 8 V IC Collector Current (DC) 3 A ICP *Collector Current (Pulse) 5 A PC Collector Dissipation (Ta=25°C) 1.3 A P C Collector Dissipation (TC=25°C) 15 W TJ Junction Temperature 150 W TSTG Storage Temperature - 55 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB = 100V, IE = 0 10 µA IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA hFE1 hFE2 *DC Current Gain VCE = 2V, IC = 1.5A VCE = 2V, IC = 3A 2K 1K 20K VCE(sat) *Collector-Emitter Saturation Voltage IC = 1.5A, IB = 1.5mA 0.9 1.2 V VBE(sat) *Base-Emitter Saturation Voltage IC = 1.5A, IB = 1.5mA 1.5 2 V tON Turn ON Time VCC = 40V, IC = 1.5A IB1 = - IB2 = 1.5mA RL = 27Ω 0.5 µs tSTG Storage Time 2 µs tF Fall Time 1 µs Classification O Y G hFE1 2000 ~ 5000 4000 ~ 12000 6000 ~ 20000 KSD1692 Feature • High Dc Durrent Gain • Low Collector Saturation Voltage • Built-in a Damper Diode at E-C • High Power Dissipation : PC = 1.3W (Ta=25°C) 1 TO-126 1. Emitter 2.Collector 3.Base |
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