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KSE13009 Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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KSE13009 Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2000 Fairchild Semiconductor International Rev. A, February 2000 NPN Silicon Transistor Absolute Maximum Ratings T C=25°C unless otherwise noted Electrical Characteristics T C=25°C unless otherwise noted * Pulse test: PW ≤300µs, Duty cycle≤2% Pulse Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V V CEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current (DC) 12 A ICP Collector Current (Pulse) 24 A IB Base Current 6 A PC Collector Dissipation (TC=25°C) 130 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units VCEO(sus) Collector-Emitter Sustaining Voltage IC = 10mA, IB = 0 400 V IEBO Emitter Cut-off Current VEB = 7V, IC = 0 1 mA hFE DC Current Gain VCE = 5V, IC = 5A VCE = 5V, IC = 8A 8 6 40 30 VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A 1 1.5 3 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 5A, IB = 1A IC = 8A, IB = 1.6A 1.2 1.6 V V Cob Output Capacitance VCB = 10V , f = 0.1MHz 180 pF fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz tON Turn ON Time VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6Ω 1.1 µs tSTG Storage Time 3 µs tF Fall Time 0.7 µs KSE13009L High Voltage Switch Mode Applications • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-3P 1 1.Base 2.Collector 3.Emitter |
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