Electrical characteristics

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N

4/21

Doc ID 13476 Rev 4

2

Electrical characteristics

(T

C

= 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 1 mA, V

GS

= 0

650

V

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 650 V

V

DS

= 650 V, T

C

=125 °C

1

100

μA

μA

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ± 25 V

± 100

nA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

234

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 5.5 A

0.425

0.455

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 50 V, f = 1 MHz,

V

GS

= 0

-800

-

pF

pF

pF

C

oss

Output capacitance

-

50

-

pF

C

rss

Reverse transfer

capacitance

-2.9

-

pF

C

oss eq.

(1)

1.

C

oss eq.

is defined as a constant equivalent capacitance giving the same charging time as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent output

capacitance

V

DS

= 0 to 520 V, V

GS

= 0

-

133

-

pF

R

G

Intrinsic gate

resistance

f = 1 MHz open drain

-

4.2

-

Ω

Q

g

Total gate charge

V

DD

= 520 V, I

D

= 11 A,

V

GS

= 10 V

(see

Figure 19)

-29

-

nC

Q

gs

Gate-source charge

-

3.9

-

nC

Q

gd

Gate-drain charge

-

16

-

nC