Parameter

Max.

Units

Drain- Source Voltage

20

V

5.4

4.3

A

Pulsed Drain Current



40

Power Dissipation

1.3

Power Dissipation

0.80

Linear Derating Factor

10

mW/°C

Single Pulse Avalanche Energy

„

33

mJ

Gate-to-Source Voltage

± 12

V

Junction and Storage Temperature Range

-55 to + 150

°C

5/13/04

Parameter

Max.

Units

Maximum Junction-to-Ambient

ƒ

100

°C/W

Thermal Resistance

Description

Absolute Maximum Ratings

W

www.irf.com

1

IRF7530PbF

l

Trench Technology

l

Ultra Low On-Resistance

l

Dual N-Channel MOSFET

l

Very Small SOIC Package

l

Low Profile (<1.1mm)

l

Available in Tape & Reel

l

Lead-Free

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design that HEXFET

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a wide

variety of applications.

The new Micro8

™ package has half the footprint area of the

standard SO-8. This makes the Micro8 an ideal device for

applicationswhereprintedcircuitboardspaceisatapremium.

The low profile (<1.1mm) of the Micro8 will allow it to fit easily

into extremely thin application environments such as portable

electronics and PCMCIA cards.

Micro8

™

D1

D1

D2

D2

G1

S2

G2

S1

Top View

8

1

2

3

4

5

6

7

PD - 95243