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TIP31B-S Arkusz danych(PDF) 1 Page - Bourns Electronic Solutions |
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TIP31B-S Arkusz danych(HTML) 1 Page - Bourns Electronic Solutions |
1 / 4 page TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS 1 JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. Designed for Complementary Use with the TIP32 Series 40 W at 25°C Case Temperature 3 A Continuous Collector Current 5 A Peak Collector Current Customer-Specified Selections Available absolute maximum ratings at 25°C case temperature (unless otherwise noted) NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = 0.4 A, RBE = 100 Ω, VBE(off) = 0, RS = 0.1 Ω, VCC = 20 V. T I N U E U L A V L O B M Y S G N I T A R Collector-base voltage (IE = 0) TIP31 TIP31A TIP31B TIP31C VCBO 80 100 120 140 V Collector-emitter voltage (IB = 0) TIP31 TIP31A TIP31B TIP31C VCEO 40 60 80 100 V Emitter-base voltage VEBO 5 V Continuous collector current IC 3 A I ) 1 e t o N e e s ( t n e rr u c r o tc el lo c k a e P CM 5 A Continuous base current IB 1 A Continuous device dissipation at (or below) 25°C P ) 2 e t o N e e s ( e r u t a r e p m e t e s a c tot 40 W P ) 3 e t o N e e s ( e r u t a r e p m e t ri a e e rf C ° 5 2 ) w ol e b r o ( t a n oi t a pi s si d e ci v e d s u o u ni t n o C tot 2 W I L ½ ) 4 e t o N e e s ( y g r e n e d a ol e vi tc u d ni d e p m al c n U C 2 32 mJ T e g n a r e r u t a r e p m e t n oi tc n uj g ni t a r e p O j -65 to +150 °C Storage temperature range Tstg -65 to +150 °C T s d n o c e s 0 1 r o f e s a c m o rf m m 2 . 3 e r u t a r e p m e t d a e L L 250 °C B C E TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA 1 2 3 This series is currently available, but not recommended for new designs. |
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