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BDW83D Arkusz danych(PDF) 2 Page - Bourns Electronic Solutions

Numer części BDW83D
Szczegółowy opis  NPN SILICON POWER DARLINGTONS
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BDW83D Arkusz danych(HTML) 2 Page - Bourns Electronic Solutions

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BDW83, BDW83A, BDW83B, BDW83C, BDW83D
NPN SILICON POWER DARLINGTONS
2
PRODUCT
INFORMATION
AUGUST 1978 - REVISED JUNE 2011
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)CEO
Collector-emitter
breakdown voltage
IC = 30 mA
IB = 0
(see Note 5)
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
45
60
80
100
120
V
ICEO
Collector-emitter
cut-off current
VCE = 30 V
VCE = 30 V
VCE = 40 V
VCE = 50 V
VCE = 60 V
IB =0
IB =0
IB =0
IB =0
IB =0
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
1
1
1
1
1
mA
ICBO
Collector cut-off
current
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
VCB = 45 V
VCB = 60 V
VCB = 80 V
VCB = 100 V
VCB = 120 V
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
IE =0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
BDW83
BDW83A
BDW83B
BDW83C
BDW83D
0.5
0.5
0.5
0.5
0.5
5
5
5
5
5
mA
IEBO
Emitter cut-off
current
VEB =
5 V
IC =0
2
mA
hFE
Forward current
transfer ratio
VCE =
3 V
VCE =
3 V
IC = 6 A
IC = 15 A
(see Notes 5 and 6)
750
100
20000
VBE(on)
Base-emitter
voltage
VCE =
3 V
IC = 6 A
(see Notes 5 and 6)
2.5
V
VCE(sat)
Collector-emitter
saturation voltage
IB = 12 mA
IB = 150 mA
IC = 6 A
IC = 15 A
(see Notes 5 and 6)
2.5
4
V
VEC
Parallel diode
forward voltage
IE =
15 A
IB = 0
3.5
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1
°C/W
RθJA
Junction to free air thermal resistance
35.7
°C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
ton
Turn-on time
IC = 10 A
VBE(off) = -4.2 V
IB(on) = 40 mA
RL = 3 Ω
IB(off) = -40 mA
tp = 20 µs, dc ≤ 2%
0.9
µs
toff
Turn-off time
7
µs
OBSOLET
E


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