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PZTA14 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części PZTA14
Szczegółowy opis  NPN Darlington Transistor
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

PZTA14 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

  PZTA14 Datasheet HTML 1Page - Fairchild Semiconductor PZTA14 Datasheet HTML 2Page - Fairchild Semiconductor PZTA14 Datasheet HTML 3Page - Fairchild Semiconductor  
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Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 100
µA, I
B = 0
30
V
ICBO
Collector-Cutoff Current
VCB = 30 V, IE = 0
100
nA
IEBO
Emitter-Cutoff Current
VEB = 10 V, IC = 0
100
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 10 mA, VCE = 5.0 V
IC = 100 mA, VCE = 5.0 V
10,000
20,000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 0.1 mA
1.5
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 5.0 V
2.0
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 5 V,
f = 100 MHz
125
MHz
NPN Darlington Transistor
(continued)
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
1
0
50
100
150
200
250
I - COLLECTOR CURRENT (A)
C
25 °C
125 °C
- 40 °C
V
= 5V
CE
Collector-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
I - COLLECTOR CURRENT (mA)
C
25°C
- 40 ºC
125 ºC
β = 1000
Base-Emitter Saturation
Voltage vs Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
C
25 °C
- 40 ºC
125 ºC
β = 1000
Base Emitter ON Voltage vs
Collector Current
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
I - COLLECTOR CURRENT (mA)
C
V = 5V
CE
- 40 ºC
25 °C
125 ºC


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