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LM27403SQX Arkusz danych(PDF) 4 Page - Texas Instruments

Numer części LM27403SQX
Szczegółowy opis  Synchronous Buck Controller with Temperature-Compensated, Inductor-DCR-Based Overcurrent Protection and Programmable Thermal Shutdown
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LM27403SQX Arkusz danych(HTML) 4 Page - Texas Instruments

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LM27403
SNVS896 A – AUGUST 2013 – REVISED SEPTEMBER 2013
www.ti.com
ELECTRICAL CHARACTERISTICS
At TJ = –40°C to +125°C and VVIN = 12 V, all parameters at zero power dissipation (unless otherwise noted). Minimum and
maximum limits are ensured through test, design, or statistical correlation. Typical values represent the most likely parametric
normal specifications at TJ = 25°C and are provided for reference purposes only.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
OPERATIONAL SPECIFICATIONS
IQ
Quiescent current
VFB = 0.6 V (not switching)
3.5
5.0
mA
IQ-SD
Shutdown quiescent current
VUVLO/EN = 0 V
25
45
µA
REFERENCE
VFB
FB pin voltage accuracy
594
600
606
mV
IFB
FB pin bias current
VFB = 0.65 V
–165
0
165
nA
INTERNAL UVLO
UVLO
Input undervoltage lockout
VVIN rising, VVDD rising
2.6
2.7
2.8
V
UVLO_hys
UVLO hysteresis
VVIN falling, VVDD falling
250
mV
SWITCHING
RFADJ = 4.12 kΩ
925
1050
1150
kHz
FSW
Switching frequency
RFADJ = 20 kΩ
435
500
555
kHz
RFADJ = 95.3 kΩ
185
215
250
kHz
DMAX
Maximum duty cycle
FSW = 500 kHz
90%
93%
TOFF-MIN
Minimum off-time
VFB = 0.5 V, FSW = 500 kHz
110
150
190
ns
TON-MIN
Minimum controllable on-time
VFB = 0.7 V, FSW = 500 kHz
30
ns
VDD SUBREGULATOR AND BOOT
VDD
Subregulator output voltage
IVDD = 25 mA
4.2
4.7
5.3
V
VDDVDO
Dropout voltage
IVDD = 15 mA, VVIN = 3.0 V
150
mV
VDDCL
VDD current limit
VVDD = 4.0 V
106
mA
IQBOOT
CBOOT pin leakage current
VCBOOT – VSW = 4.5 V
0.5
nA
ERROR AMPLIFIER
BW-3dB
Error amplifier open-loop bandwidth
6
MHz
AVOL
Error amplifier dc gain
70
dB
ISOURCE
COMP source current
VFB = 0.5 V
1
mA
ISINK
COMP sink current
VFB = 0.7 V
100
µA
VCOMP-MAX
Maximum COMP voltage
VFB = 0.5 V
3.9
V
VCOMP-MIN
Minimum COMP voltage
VFB = 0.7 V
0.5
V
OVERCURRENT PROTECTION
Current limit comparator offset
VCS_OFFSET
–3.5
0
3.5
mV
voltage
VCS– = 3 V, ΔVBE = 59.4 mV
(1), T
J = 25°C
9.3
9.9
10.5
µA
ICS
Current limit offset current
VCS– = 3 V, D+ shorted to D–
3.4
5.0
6.6
µA
ICS-CV1
VVIN = 12 V
800
mV
ICS compliance voltage
VVIN – VCS–, ΔICS < 5%
ICS-CV2
VVIN = 3 V
800
mV
ICS-TC
ICS temperature coefficient
Referenced to
ΔVBE
(2)
160
187
212
nA/mV
TCL-DELAY
Current limit hiccup delay
5
ms
GATE DRIVERS
RDS(ON)1
IHG = 0.1 A (pullup)
1.5
Ω
High-side MOSFET driver on-state
VCBOOT – VSW = 4.5 V
resistance
RDS(ON)2
IHG = –0.1 A (pulldown)
1.0
Ω
IDRV-HG-SRC
Source current (pullup)
1.5
A
High-side MOSFET driver peak
CLOAD = 3 nF
current
IDRV-HG-SINK
Sink current (pulldown)
2.0
A
(1)
The specified parameter is calculated based on a 2N3904 transistor at 25°C.
(2)
Multiply by 19.9 to scale from nA/mV to ppm/°C (assumes 2N3904 BJT temperature sensor with ideality factor
η =1.004).
4
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