TPC8053-H datasheet(3/7 Pages) TOSHIBA

Numer części	TPC8053-H

Szczegółowy opis	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H)

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Producent	TOSHIBA [Toshiba Semiconductor]

Strona internetowa	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPC8053-H

2009-08-18

3

Electrical Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±20 V, VDS = 0 V

⎯

±100

nA

Drain cutoff current

IDSS

VDS = 60 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

60

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −20 V

43

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 0.2 mA

1.3

⎯

2.3

V

VGS = 4.5 V, ID = 4.5 A

⎯

15.8

24.2

Drain-source ON-resistance

RDS (ON)

VGS = 10 V, ID = 4.5 A

⎯

14.1

22.5

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 4.5 A

15

30

⎯

S

Input capacitance

Ciss

⎯

1620

2110

Reverse transfer capacitance

Crss

⎯

60

90

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

200

⎯

pF

Gate resistance

rg

VDS = 10 V, VGS = 0 V, f = 5 MHz

⎯

2.3

3.5

Ω

Rise time

tr

⎯

2.4

⎯

Turn-on time

ton

⎯

9.1

⎯

Fall time

tf

⎯

7.0

⎯

Switching time

Turn-off time

toff

Duty

≤ 1%, tw = 10 μs

⎯

34

⎯

ns

VDD ≈ 48 V, VGS = 10 V, ID = 9 A

⎯

25

⎯

Total gate charge

(gate-source plus gate-drain)

Qg

VDD ≈ 48 V, VGS = 5 V, ID = 9 A

⎯

13

⎯

Gate-source charge 1

Qgs1

⎯

5.2

⎯

Gate-drain (“Miller”) charge

Qgd

⎯

4.5

⎯

Gate switch charge

QSW

VDD ≈ 48 V, VGS = 10 V, ID = 9 A

⎯

6.7

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristic

Symbol

Test Condition

Min

Typ.

Max

Unit

Peak forward current

Pulse

(Note 1)

IFP

⎯

36

A

Forward voltage (diode)

VDSF

IDR = 9 A, VGS = 0 V

⎯

−1.2

V

VDD ≈ 30 V

0 V

VGS

10 V

ID = 4.5 A

VOUT

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