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TPCP8701 Arkusz danych(PDF) 4 Page - Toshiba Semiconductor

Numer części TPCP8701
Szczegółowy opis  TOSHIBA Transistor Silicon NPN Epitaxial Type
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
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TPCP8701 Arkusz danych(HTML) 4 Page - Toshiba Semiconductor

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TPCP8701
2004-05-11
4
1.0
0
0
0.8
1.0
0.8
rth – tw
Pulse width tw (s)
1000
1
0.001
1000
0.01
0.1
1
10
100
10
100
0.6
0.2
0.4
0.2
0.6
0.4
Collector power dissipation at the single-device
operation is 0.94W.
Collector power dissipation at the single-device value at
dual operation is 0.54W.
Collector power dissipation at the dual operation is set
to 1.08W.
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
= 25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
2)
(1) Single-device operation
(2) Single-device value at dual operation
Permissible Power Dissipation for
Simultaneous Operation
Permissible power dissipation for Q1
PC (W)
DC operation
Ta
= 25°C
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
2)
:Single nonrepetitive pulse
Ta
= 25°C
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
2).
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
1 ms※
10 ms※
100 µs※
IC max (Pulsed)※
DC operation
Ta = 25°C
IC max (Continuous)*
10 s※*
100 ms※*
Collector
−emitter voltage VCE (V)
Safe operating area
0.01
0.1
0.1
1
10
1
10
100
10 µs※
(1)
(2)


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