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TPCP8701 Arkusz danych(PDF) 1 Page - Toshiba Semiconductor |
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TPCP8701 Arkusz danych(HTML) 1 Page - Toshiba Semiconductor |
1 / 5 page TPCP8701 2004-05-11 1 TOSHIBA Transistor Silicon NPN Epitaxial Type TPCP8701 Portable Equipment Applications Switching Applications Inverter Lighting Applications • Small footprint due to small and thin package • High DC current gain : hFE = 400 to 1000 (IC = 0.3 A) • Low collector-emitter saturation : VCE (sat) = 0.14 V (max) • High-speed switching : tf = 120 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V VCEX 80 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V DC (Note 1) IC 3.0 Collector current Pulse (Note 1 ) ICP 5.0 A Base current IB 300 mA Single-device operation 1.77 Collector power dissipation (t = 10s) Single-device value at dual operation Pc (Note 2) 0.95 W Single-device operation 0.94 Collector power dissipation (DC) Single-device value at dual operation Pc (Note 2) 0.54 W Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note 1: Please use devices on condition that the junction temperature is below 150°C. Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm 2) Note 3: ● on lower left on the marking indicates Pin 1. ※ Weekly code: (Three digits) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3V1C Weight: 0.017 g (typ.) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) Figure 1. Circuit configuration (Top View) Figure 2. Marking (Note 3) Type Lot No. (Weekly code) 8701 8 7 6 5 1 2 3 4 ※ 1 2 3 4 8 7 6 5 0.33±0.05 0.28 +0.1 -0.11 1.12 +0.13 -0.12 0.475 0.65 A 0.05 M 2.9±0.1 4 1 5 8 0.8±0.05 0.17±0.02 B B 0.05 M A S 0.025 S 1.12 +0.13 -0.12 0.28 +0.1 -0.11 1.Emitter1 2.Base1 3.Emitter2 4.Base2 5.Collector2 6.Collector2 7.Collector1 8.Collector1 |
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