IRF640NLPBF datasheet(4/11 Pages) KERSEMI

Numer części	IRF640NLPBF

Szczegółowy opis	Advanced Process Technology Dynamic dv/dt Rating 175 Operating Temperature

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Producent	KERSEMI [Kersemi Electronic Co., Ltd.]

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4

IRF640NPbF/SPbF/LPbF

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0.1

1

10

100

1000

0.1

1

10

100

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

Single Pulse

T

= 175 C

= 25 C

°

J

C

V

, Drain-to-Source Voltage (V)

DS

10us

100us

1ms

10ms

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0

500

1000

1500

2000

2500

Coss

Crss

Ciss

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

0

20

40

60

80

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

I =

D 11A

V

= 40V

DS

V

= 100V

DS

V

= 160V

DS

0.1

1

10

100

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

V

,Source-to-Drain Voltage (V)

SD

V

= 0 V

GS

T = 25 C

J

°

T = 175 C

J

°

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