 |
Zakładka z wyszukiwarką danych komponentów |
|
|
Zakładka z wyszukiwarką danych komponentów |
|
IRF2807SPBF Arkusz danych(PDF) 2 Page - Kersemi Electronic Co., Ltd. |
|
||||||||||||||||||||||||||||||
IRF2807SPBF Arkusz danych(HTML) 2 Page - Kersemi Electronic Co., Ltd. |
|
|
2 / 10 page  IRF2807S/LPbF 2 S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 43A, VGS = 0V trr Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 43A Qrr Reverse Recovery Charge ––– 410 610 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 82 280 A Starting TJ = 25°C, L = 370µH RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) Notes: ISD ≤ 43A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is a typical value at device destruction and represents operation outside rated limits. This is a calculated value limited to TJ = 175°C . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. **When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 13 m Ω VGS = 10V, ID = 43A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 38 ––– ––– S VDS = 50V, ID = 43A ––– ––– 25 µA VDS = 75V, VGS = 0V ––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V Qg Total Gate Charge ––– ––– 160 ID = 43A Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 60V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 55 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 13 ––– VDD = 38V tr Rise Time ––– 64 ––– ID = 43A td(off) Turn-Off Delay Time ––– 49 ––– RG = 2.5Ω tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 3820 ––– VGS = 0V Coss Output Capacitance ––– 610 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 130 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 1280
340 mJ IAS = 50A, L = 370µH nH Electrical Characteristics @ TJ = 25°C (unless otherwise specified) LD Internal Drain Inductance LS Internal Source Inductance ––– ––– S D G IGSS ns 4.5 7.5 IDSS Drain-to-Source Leakage Current www.kersemi.com |
Podobny numer części - IRF2807SPBF |
|
Podobny opis - IRF2807SPBF |
|
|
|
Link URL |
| Polityka prywatności |
| ALLDATASHEET.PL |
| Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Polish ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
