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Zakładka z wyszukiwarką danych komponentów |
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Zakładka z wyszukiwarką danych komponentów |
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IRF1404PBF Arkusz danych(PDF) 4 Page - Kersemi Electronic Co., Ltd. |
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IRF1404PBF Arkusz danych(HTML) 4 Page - Kersemi Electronic Co., Ltd. |
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4 / 9 page  IRF1404PbF 4 Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage 0 50 100 150 200 0 4 8 12 16 20 Q , Total Gate Charge (nC) G FOR TEST CIRCUIT SEE FIGURE I = D 13 121A V = 20V DS V = 32V DS 0.1 1 10 100 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 175 C J ° 1 10 100 1000 10000 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 175 C = 25 C ° ° J C V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms 1 10 100 VDS, Drain-to-Source Voltage (V) 0 2000 4000 6000 8000 10000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs+ Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd www.kersemi.com |
Podobny numer części - IRF1404PBF |
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Podobny opis - IRF1404PBF |
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