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SI2315BDS-T1 Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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SI2315BDS-T1 Arkusz danych(HTML) 5 Page - Vishay Siliconix |
5 / 9 page Document Number: 72014 S-80642-Rev. E, 24-Mar-08 www.vishay.com 5 Vishay Siliconix Si2315BDS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72014. Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10-3 10-2 1 10 600 10-1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 130 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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