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Si4403BDY-T1-GE3 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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Si4403BDY-T1-GE3 Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si4403BDY Document Number: 72268 S09-0705-Rev. C, 27-Apr-09 www.vishay.com 1 P-Channel 1.8-V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 20 0.017 at VGS = - 4.5 V - 9.9 0.023 at VGS = - 2.5 V - 8.5 0.032 at VGS = - 1.8 V - 7.2 S S D D D S G D SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4403BDY-T1-E3 (Lead (Pb)-free) Si4403BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID - 9.9 - 7.3 A TA = 70 °C - 7.9 - 5.8 Pulsed Drain Current IDM - 30 Continuous Source Current (Diode Conduction)a IS - 2.3 - 1.3 Maximum Power Dissipationa TA = 25 °C PD 2.5 1.35 W TA = 70 °C 1.6 0.87 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 43 50 °C/W Steady State 71 92 Maximum Junction-to-Foot (Drain) Steady State RthJF 19 25 |
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Podobny opis - Si4403BDY-T1-GE3 |
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