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TIP33A Arkusz danych(PDF) 1 Page - ON Semiconductor |
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TIP33A Arkusz danych(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 4 1 Publication Order Number: TIP33C/D TIP33A, TIP33C NPN High-Power Transistors Designed for general−purpose power amplifier and switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • Epoxy Meets UL 94 V−0 @ 0.125 in • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage TIP33A TIP33C VCEO 60 100 Vdc Collector − Base Voltage TIP33A TIP33C VCBO 60 100 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous − Peak (Note 1) IC 10 15 Adc Apk Base Current − Continuous IB 3.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 80 0.64 Watts W/°C Operating and Storage Junction Temperature Range TJ, Tstg – 65 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 AMPERE NPN SILICON POWER TRANSISTORS 60 & 100 VOLT, 80 WATTS SOT−93 (TO−218) CASE 340D STYLE 1 TO−247 CASE 340L STYLE 3 NOTE: Effective June 2012 this device will be available only in the TO−247 package. Reference FPCN# 16827. See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. ORDERING INFORMATION |
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