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TIP33A Arkusz danych(PDF) 4 Page - ON Semiconductor

Numer części TIP33A
Szczegółowy opis  NPN High-Power Transistors Designed for general?뭦urpose power amplifier and switching
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Producent  ONSEMI [ON Semiconductor]
Strona internetowa  http://www.onsemi.com
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TIP33A Arkusz danych(HTML) 4 Page - ON Semiconductor

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TIP33A, TIP33C
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4
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (A)
0.1
1.0
5.0
10
10
20
100
500
200
50
NPN
PNP
VCE = 4.0 V
TJ = 25°C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
20
1.0
50
100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.1
2.0
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
1.0ms
dc
300
ms
5.0
3.0
15
10
10ms
0.2
0.5
2.0
3.0
5.0 7.0
30
70
TC = 25°C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
60
0
80
100
Figure 3. Maximum Rated Forward Bias
Safe Operating Area
0
10
15
20
5.0
20
40
L = 200
mH
IC/IB ≥ 5.0
VBE(off) = 0 to 5.0 V
TC = 100°C
TIP33A
TIP33C
FORWARD BIAS
The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25_C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be
derated thermally for TC > 25_C.
REVERSE BIAS
The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turn−off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.


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