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TIP33C Arkusz danych(PDF) 1 Page - ON Semiconductor

Numer części TIP33C
Szczegółowy opis  NPN High-Power Transistors Designed for general?뭦urpose power amplifier and switching
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© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 4
1
Publication Order Number:
TIP33C/D
TIP33A, TIP33C
NPN High-Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
Epoxy Meets UL 94 V−0 @ 0.125 in
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
TIP33A
TIP33C
VCEO
60
100
Vdc
Collector − Base Voltage
TIP33A
TIP33C
VCBO
60
100
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current
− Continuous
− Peak (Note 1)
IC
10
15
Adc
Apk
Base Current − Continuous
IB
3.0
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
80
0.64
Watts
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.56
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
35.7
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE
NPN SILICON
POWER TRANSISTORS
60 & 100 VOLT, 80 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION


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