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Zakładka z wyszukiwarką danych komponentów |
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IRF5810TRPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF5810TRPBF Arkusz danych(HTML) 1 Page - International Rectifier |
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1 / 9 page  Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VGS @ -4.5V -2.9 ID @ TA= 70°C Continuous Drain Current, VGS @ -4.5V -2.3 A IDM Pulsed Drain Current -11 PD @TA = 25°C Power Dissipation 0.96 PD @TA = 70°C Power Dissipation 0.62 Linear Derating Factor 0.008 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 04/20/10 www.irf.com 1 IRF5810PbF HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 130 °C/W Thermal Resistance Absolute Maximum Ratings W VDSS RDS(on) max (mW) ID -20V 90@VGS = -4.5V -2.9A 135@VGS = -2.5V -2.3A TSOP-6 These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5810 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. Description l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free PD - 95469B |
Podobny numer części - IRF5810TRPBF |
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Podobny opis - IRF5810TRPBF |
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