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IRF5852TRPBF Arkusz danych(PDF) 1 Page - International Rectifier |
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IRF5852TRPBF Arkusz danych(HTML) 1 Page - International Rectifier |
1 / 10 page Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 2.7 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 2.2 A IDM Pulsed Drain Current 11 PD @TA = 25°C Power Dissipation 0.96 PD @TA = 70°C Power Dissipation 0.62 Linear Derating Factor 7.7 mW/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 1/13/03 Parameter Max. Units RθJA Maximum Junction-to-Ambient 130 °C/W Thermal Resistance Absolute Maximum Ratings W www.irf.com 1 IRF5852 HEXFET® Power MOSFET These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability. Description l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge PD - 93999A TSOP-6 Top View VDSS RDS(on) max (W) ID 20 V 0.090@VGS = 4.5V 2.7A 0.120@VGS = 2.5V 2.2A S2 G2 G1 3 2 1 4 5 6D1 D2 S 1 |
Podobny numer części - IRF5852TRPBF |
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Podobny opis - IRF5852TRPBF |
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