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IRL6342PBF Arkusz danych(PDF) 2 Page - International Rectifier |
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IRL6342PBF Arkusz danych(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRL6342PbF 2 www.irf.com S D G Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. When mounted on 1 ich square copper board. Rθ is measured at TJ of approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C RDS(on) ––– 12.0 14.6 ––– 15.0 19.0 VGS(th) Gate Threshold Voltage 0.5 ––– 1.1 V VDS = VGS, ID = 10µA ∆VGS(th) Gate Threshold Voltage Coefficient ––– -4.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 38 ––– ––– S Qg Total Gate Charge ––– 11 ––– Qgs1 Pre-Vth Gate-to-Source Charge ––– 0.01 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 0.60 ––– Qgd Gate-to-Drain Charge ––– 4.6 ––– Qgodr Gate Charge Overdrive ––– 5.79 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 5.2 ––– RG Gate Resistance ––– 2.0 ––– Ω td(on) Turn-On Delay Time ––– 6.0 ––– tr Rise Time –––12––– td(off) Turn-Off Delay Time ––– 33 ––– tf Fall Time ––– 14 ––– Ciss Input Capacitance ––– 1025 ––– Coss Output Capacitance ––– 97 ––– Crss Reverse Transfer Capacitance ––– 70 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.2 V trr Reverse Recovery Time ––– 13 20 ns Qrr Reverse Recovery Charge ––– 5.2 7.8 nC Thermal Resistance Parameter Units RθJL Junction-to-Drain Lead f RθJA Junction-to-Ambient e nC VGS = 4.5V VDS = 15V ID = 7.9A Typ. ––– ––– °C/W Max. 20 50 Static Drain-to-Source On-Resistance A ––– ––– ––– ––– 2.5 79 nA ns pF RG = 6.8 Ω VDS = 10V, ID = 7.9A VDS = 24V, VGS = 0V, TJ = 125°C VDD = 15V, VGS = 4.5V eà ID = 7.9A VGS = 12V VGS = -12V m Ω µA TJ = 25°C, IF = 7.9A, VDD = 24V di/dt = 100/µs d TJ = 25°C, IS = 9.9A, VGS = 0V d showing the integral reverse p-n junction diode. MOSFET symbol VDS = 24V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 4.5V, ID = 9.9A d VGS = 2.5V, ID = 7.9A d Conditions See Figs. 18 ƒ = 1.0MHz VGS = 0V VDS = 25V |
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