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FDD050N03B Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDD050N03B
Szczegółowy opis  N-Channel PowerTrench MOSFET
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

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©2009 Fairchild Semiconductor Corporation
FDD050N03B Rev. C0
Package Marking and Ordering Information
Electrical Characteristics T
C = 25
oC unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD050N03B
FDD050N03B
D-PAK
330mm
16mm
2500
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V, TC = 25oC30
-
-
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, Referenced to 25oC-
13
-
mV/oC
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
-
-
1
μA
IGSS
Gate to Body Leakage Current
VGS = ±16V, VDS = 0V
-
-
±100
nA
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
1.25
2.0
3.0
V
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 25A
-
3.7
5.0
m
Ω
VGS = 4.5V, ID = 15A
-
5.2
8.1
gFS
Forward Transconductance
VDS = 5V, ID = 50A
-
169
-
S
Ciss
Input Capacitance
VDS = 15V, VGS = 0V
f = 1MHz
-
2160
2875
pF
Coss
Output Capacitance
-
805
1070
pF
Crss
Reverse Transfer Capacitance
-
85
130
pF
Qg(tot)
Total Gate Charge at 10V
VDD = 15V, ID = 50A
VGS = 10V
(Note 4)
-33
43
nC
Qgs
Gate to Source Gate Charge
-
7.8
-
nC
Qgs2
Gate Charge Threshold to Plateau
-
3.8
-
nC
Qgd
Gate to Drain “Miller” Charge
-
4.6
-
nC
td(on)
Turn-On Delay Time
VDD = 15V, ID = 50A
VGS = 10V, RGEN = 4.7Ω
(Note 4)
-14.5
39
ns
tr
Turn-On Rise Time
-
4.5
18
ns
td(off)
Turn-Off Delay Time
-
30
70
ns
tf
Turn-Off Fall Time
-
4.5
19
ns
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
90*
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
360
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 50A
-
-
1.3
V
trr
Reverse Recovery Time
VGS = 0V, ISD = 50A
dIF/dt = 100A/μs
-33
-
ns
Qrr
Reverse Recovery Charge
-
19
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 1mH, IAS = 12A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics
5. When mounted on a 1 in2 pad of 2 oz copper


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