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FDD050N03B Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDD050N03B Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 8 page www.fairchildsemi.com 2 ©2009 Fairchild Semiconductor Corporation FDD050N03B Rev. C0 Package Marking and Ordering Information Electrical Characteristics T C = 25 oC unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Switching Characteristics Drain-Source Diode Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDD050N03B FDD050N03B D-PAK 330mm 16mm 2500 Symbol Parameter Test Conditions Min. Typ. Max. Unit BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V, TC = 25oC30 - - V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, Referenced to 25oC- 13 - mV/oC IDSS Zero Gate Voltage Drain Current VDS = 24V, VGS = 0V - - 1 μA IGSS Gate to Body Leakage Current VGS = ±16V, VDS = 0V - - ±100 nA VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA 1.25 2.0 3.0 V RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 25A - 3.7 5.0 m Ω VGS = 4.5V, ID = 15A - 5.2 8.1 gFS Forward Transconductance VDS = 5V, ID = 50A - 169 - S Ciss Input Capacitance VDS = 15V, VGS = 0V f = 1MHz - 2160 2875 pF Coss Output Capacitance - 805 1070 pF Crss Reverse Transfer Capacitance - 85 130 pF Qg(tot) Total Gate Charge at 10V VDD = 15V, ID = 50A VGS = 10V (Note 4) -33 43 nC Qgs Gate to Source Gate Charge - 7.8 - nC Qgs2 Gate Charge Threshold to Plateau - 3.8 - nC Qgd Gate to Drain “Miller” Charge - 4.6 - nC td(on) Turn-On Delay Time VDD = 15V, ID = 50A VGS = 10V, RGEN = 4.7Ω (Note 4) -14.5 39 ns tr Turn-On Rise Time - 4.5 18 ns td(off) Turn-Off Delay Time - 30 70 ns tf Turn-Off Fall Time - 4.5 19 ns IS Maximum Continuous Drain to Source Diode Forward Current - - 90* A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 360 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 50A - - 1.3 V trr Reverse Recovery Time VGS = 0V, ISD = 50A dIF/dt = 100A/μs -33 - ns Qrr Reverse Recovery Charge - 19 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 1mH, IAS = 12A, VDD = 27V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Essentially Independent of Operating Temperature Typical Characteristics 5. When mounted on a 1 in2 pad of 2 oz copper |
Podobny numer części - FDD050N03B |
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Podobny opis - FDD050N03B |
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