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FQPF9N50CT Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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FQPF9N50CT Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 10 page Rev. A, June 2003 ©2003 Fairchild Semiconductor Corporation 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 µ s DC 10 ms 1 ms 100 µ s Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 o C 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 100 ms 10 µs DC 10 ms 1 ms 100 µs Operation in This Area is Limited by R DS(on) ※ Notes : 1. T C = 25 oC 2. T J = 150 o C 3. Single Pulse V DS, Drain-Source Voltage [V] Typical Characteristics (Continued) Figure 9-1. Maximum Safe Operating Area for FQP9N50C Figure 10. Maximum Drain Current vs Case Temperature Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature Figure 9-2. Maximum Safe Operating Area for FQPF9N50C -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ※ Notes : 1. V GS = 0 V 2. I D = 250 μ A T J, Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ※ Notes : 1. V GS = 10 V 2. I D = 4.5 A T J, Junction Temperature [ o C] 25 50 75 100 125 150 0 2 4 6 8 10 T C , Case Temperature [℃] |
Podobny numer części - FQPF9N50CT |
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Podobny opis - FQPF9N50CT |
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