ADG636YRUZ1 datasheet(5/16 Pages) AD | 1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/+5 V/+3 V Dual SPDT Switch

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ADG636YRUZ1 Arkusz danych(PDF) 5 Page - Analog Devices

Numer części	ADG636YRUZ1

Szczegółowy opis	1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V Dual SPDT Switch

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Producent	AD [Analog Devices]

Strona internetowa	http://www.analog.com

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ADG636

Rev. B | Page 5 of 16

SINGLE SUPPLY

VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −40°C to +125°C, unless otherwise noted.

Table 2.

Parameter

+25°C

−40°C to +85°C

−40°C to +125°C

Unit

Test Conditions/Comments

ANALOG SWITCH

Analog Signal Range

0 V to VDD

V

VDD = 4.5 V, VSS = 0 V

On Resistance, RON

210

Ω typ

VS = 3.5 V, IDS = −1 mA, Figure 14

290

350

380

Ω max

VS = 3.5 V, IDS = −1 mA, Figure 14

On Resistance Match Between Channels, ΔRON

3

Ω typ

VS = 3.5 V, IDS = −1 mA

12

13

Ω max

VS = 3.5 V, IDS = −1 mA

LEAKAGE CURRENTS

VDD = 5.5 V

Source Off Leakage, IS (Off )

±0.01

nA typ

VS = 1 V/4.5 V, VD = 4.5 V/1 V,

Figure 15

±0.1

±0.25

±2

nA max

VS = 1 V/4.5 V, VD = 4.5 V/1 V,

Figure 15

Drain Off Leakage, ID (Off )

±0.01

nA typ

VS = 1 V/4.5 V, VD = 4.5 V/1 V,

Figure 15

±0.1

±0.25

±2

nA max

VS = 1 V/4.5 V, VD = 4.5 V/1 V,

Figure 15

Channel On Leakage, ID (On), IS (On)

±0.01

nA typ

VS = VD = 4.5 V/1 V, Figure 16

±0.1

±0.25

±6

nA max

VS = VD = 4.5 V/1 V, Figure 16

DIGITAL INPUTS

Input High Voltage, VINH

2.4

V min

Input Low Voltage, VINL

0.8

V max

Input Current, IINL or IINH

0.005

μA typ

VIN = VINL or VINH

±0.1

μA max

VIN = VINL or VINH

Digital Input Capacitance, CIN

2

pF typ

DYNAMIC CHARACTERISTICS1

Transition Time

90

ns typ

VS1A = 3 V, VS1B = 0 V, RL = 300 Ω,

CL = 35 pF, Figure 17

150

185

210

ns max

VS1A = 3 V, VS1B = 0 V, RL = 300 Ω,

CL = 35 pF, Figure 17

tON Enable

135

ns typ

RL = 300 Ω, CL = 35 pF, VS = 3 V,

Figure 19

180

235

275

ns max

RL = 300 Ω, CL = 35 pF, VS = 3 V,

Figure 19

tOFF Enable

70

ns typ

RL = 300 Ω, CL = 35 pF, VS = 3 V,

Figure 19

105

120

135

ns max

RL = 300 Ω, CL = 35 pF, VS = 3 V,

Figure 19

Break-Before-Make Time Delay, tBBM

30

ns typ

RL = 300 Ω, CL = 35 pF, VS = 3 V,

Figure 18

10

ns min

RL = 300 Ω, CL = 35 pF, VS = 3 V,

Figure 18

Charge Injection

0.3

pC typ

VS = 0 V, RS = 0 Ω, CL = 1 nF,

Figure 20

Off Isolation

−60

dB typ

RL = 50 Ω, CL = 5 pF, f = 10 MHz,

Figure 21

Channel-to-Channel Crosstalk

−65

dB typ

RL = 50 Ω, CL = 5 pF, f = 10 MHz,

Figure 23

Bandwidth −3 dB

530

MHz typ

RL = 50 Ω, CL = 5 pF, Figure 22

CS (Off )

5

pF typ

f = 1 MHz

CD (Off )

8

pF typ

f = 1 MHz

CD (On), CS (On)

8

pF typ

f = 1 MHz

Podobny numer części - ADG636YRUZ1

Producent	Numer części	Arkusz danych	Szczegółowy opis
Analog Devices	ADG636YRU	147Kb / 12P	1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch REV. 0

Podobny opis - ADG636YRUZ1

Producent	Numer części	Arkusz danych	Szczegółowy opis
Analog Devices	ADG636	147Kb / 12P	1 pC Charge Injection, 100 pA Leakage CMOS 5 V/5 V/3 V Dual SPDT Switch REV. 0
	ADG611	361Kb / 16P	1 pC Charge Injection, 100 pA Leakage, CMOS, 짹5 V/5 V/3 V, Quad SPST Switches REV. A
	ADG604	155Kb / 12P	1 pC Charge Injection, 100 pA Leakage CMOS 짹5 V/5 V/3 V 4-Channel Multiplexer REV. 0
	ADG604YRUZ	162Kb / 12P	1 pC Charge Injection, 100 pA Leakage CMOS 5,-5 V/5 V/3 V 4-Channel Multiplexer REV. 0
Vishay Siliconix	DG9234E	277Kb / 12P	1 pC Charge Injection, 100 pA Leakage, 5 V / 3 V, Dual SPST Analog Switches 08-Feb-17
Vishay Siliconix	DG9232E	276Kb / 12P	1 pC Charge Injection, 100 pA Leakage, 5 V / 3 V, Dual SPST Analog Switches Rev. A, 25-Jul-16
Analog Devices	ADG611	152Kb / 12P	1 pC Chanrge Injection, 100 pA Leakage, CMOS -5 V/5 V/3 V Quad SPST Switches REV. 0
Vishay Siliconix	DG636	192Kb / 13P	0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch Rev. D, 02-Aug-10
	DG636	240Kb / 15P	0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch 01-Jan-2022
	DG636	190Kb / 10P	0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch Rev. B, 04-Feb-08

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