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SI7846DP-T1-GE3 Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części SI7846DP-T1-GE3
Szczegółowy opis  N-Channel 150-V (D-S) MOSFET
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Document Number: 71442
S09-0537-Rev. F, 06-Apr-09
Vishay Siliconix
Si7846DP
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
4.5
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 150 V, VGS = 0 V
1
µA
VDS = 150 V, VGS = 0 V, TJ = 55 °C
5
On-State Drain Currenta
ID(on)
VDS ≥ 5 V, VGS = 10 V
50
A
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 5 A
0.041
0.050
Ω
Forward Transconductancea
gfs
VDS = 15 V, ID = 5 A
18
S
Diode Forward Voltagea
VSD
IS = 2.8 A, VGS = 0 V
0.75
1.1
V
Dynamicb
Total Gate Charge
Qg
VDS = 75 V, VGS = 10 V, ID = 5 A
30
36
nC
Gate-Source Charge
Qgs
8.5
Gate-Drain Charge
Qgd
8.5
Gate Resistance
Rg
0.20.851.4
Ω
Turn-On Delay Time
td(on)
VDD = 75 V, RL = 15 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 6 Ω
12
18
ns
Rise Time
tr
711
Turn-Off Delay Time
td(off)
22
33
Fall Time
tf
10
15
Source-Drain Reverse Recovery Time
trr
IF = 2.8 A, dI/dt = 100 A/µs
40
70
Output Characteristics
0
10
20
30
40
50
0
2468
10
VGS = 10 V thru 7 V
VDS - Drain-to-Source Voltage (V)
6 V
5 V
3 V, 4 V
Transfer Characteristics
0
10
20
30
40
50
012
34
567
TC = 125 °C
- 55 °C
25 °C
VGS - Gate-to-Source Voltage (V)


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