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SI7846DP-T1-GE3 Arkusz danych(PDF) 4 Page - Vishay Siliconix |
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SI7846DP-T1-GE3 Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 8 page www.vishay.com 4 Document Number: 71442 S09-0537-Rev. F, 06-Apr-09 Vishay Siliconix Si7846DP TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Threshold Voltage - 1.5 - 1.0 - 0.5 0.0 0.5 1.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) Avalanche Current vs. Time 10-5 10-3 10-2 10-1 1 t in (s) 0.1 1 10 100 125 °C 25 °C 10-4 Single Pulse Power, Junction-to-Ambient 0.001 0 1 80 100 20 10 0.01 Time (s) 60 40 0.1 Normalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 600 10-1 10-4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 52 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM |
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