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SI4435DY Arkusz danych(PDF) 4 Page - Fairchild Semiconductor |
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SI4435DY Arkusz danych(HTML) 4 Page - Fairchild Semiconductor |
4 / 5 page SI4435DY Rev D1(W) Typical Characteristics 0 2 4 6 8 10 0 6 12 18 24 30 Q g , GATE CHARGE (nC) I D = -8.8A V DS = -5V -10V -15V 0 500 1000 1500 2000 2500 0 5 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) C ISS C OSS C RSS f = 1 MHz V GS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.01 0.1 1 10 100 0.1 1 10 100 -V DS , DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms 100 µ s R DS(ON) LIMIT V GS = -10V SINGLE PULSE Rθ JA = 125oC/W T A = 25oC 10ms 1ms 10s 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , TIME (sec) SINGLE PULSE Rθ JA = 125°C/W T A = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) + RθJA RθJA = 125 o C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. |
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Podobny opis - SI4435DY |
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