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SI4463DY Arkusz danych(PDF) 1 Page - Fairchild Semiconductor

Numer części SI4463DY
Szczegółowy opis  P-Channel 2.5V Specified PowerTrench MOSFET
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Strona internetowa  http://www.fairchildsemi.com
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SI4463DY Arkusz danych(HTML) 1 Page - Fairchild Semiconductor

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January 2001
2001 Fairchild Semiconductor International
Si4463DY Rev A(W)
Si4463DY
P-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged
gate PowerTrench process. It has been optimized for
power management applications with a wide range of
gate drive voltage (2.5V – 12V).
Applications
• Power management
• Load switch
• Battery protection
Features
• –11.5 A, –20 V. R
DS(ON) = 12 m
Ω @ V
GS = –4.5 V
RDS(ON) = 17.5 m
Ω @ V
GS = –2.5 V
• Fast switching speed.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
S
D
S
S
SO-8
D
D
D
G
4
3
2
1
5
6
7
8
Absolute Maximum Ratings
TA=25
oC unless otherwise noted
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
– Continuous
(Note 1a)
–11.5
A
– Pulsed
–50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
PD
(Note 1c)
1.0
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
4463
Si4463DY
13’’
12mm
2500 units


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