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SI4463DY Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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SI4463DY Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 3 page January 2001 2001 Fairchild Semiconductor International Si4463DY Rev A(W) Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications • Power management • Load switch • Battery protection Features • –11.5 A, –20 V. R DS(ON) = 12 m Ω @ V GS = –4.5 V RDS(ON) = 17.5 m Ω @ V GS = –2.5 V • Fast switching speed. • High performance trench technology for extremely low RDS(ON) • High power and current handling capability S D S S SO-8 D D D G 4 3 2 1 5 6 7 8 Absolute Maximum Ratings TA=25 oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current – Continuous (Note 1a) –11.5 A – Pulsed –50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 PD (Note 1c) 1.0 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 4463 Si4463DY 13’’ 12mm 2500 units |
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