SI4532DY datasheet(1/4 Pages) FAIRCHILD

Numer części	SI4532DY

Szczegółowy opis	Dual N- and P-Channel Enhancement Mode Field Effect Transistor

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Producent	FAIRCHILD [Fairchild Semiconductor]

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Si4532DY, Rev. C

Si4532DY*

Dual N- and P-Channel Enhancement Mode Field Effect Transistor

September 1999

Features

N-Channel 3.9A, 30V.R

DS(ON) = 0.065Ω @VGS = 10V

R

DS(ON) = 0.095Ω @VGS = 4.5V.

P-Channel -3.5A,-30V.R

DS(ON)= 0.085Ω @VGS = -10V

R

DS(ON)= 0.190 Ω @VGS = -4.5V.

High density cell design for extremely low R

DS(ON).

High power and current handling capability in a widely

used surface mount package.

Dual (N & P-Channel) MOSFET in surface mount

package.

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General Description

These dual N- and P-Channel enhancement mode power

field effect transistors are produced using Fairchild's

propretary, high cell density, DMOS technology. This very

high density process is especially tailored to minimize

on-state resistance and provide superior switching

performance. These devices are particularly suited for

low voltage applications such as notebook computer

power management and other battery powered circuits

where fast switching, low in-line power loss, and

resistance to transients are needed.

Podobny numer części - SI4532DY

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Vishay Siliconix	SI4532DY	123Kb / 7P	N- and P-Channel 30-V (D-S) MOSFET Rev. D, 23-Nov-93

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