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SI4822 Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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SI4822 Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page Electrical Characteristics (T A = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µA 30 V ∆BV DSS/∆TJ Breakdown Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC 33 mV / oC I DSS Zero Gate Voltage Drain Current V DS = 24 V, VGS = 0 V 1 µA T J = 55°C 10 µA I GSSF Gate - Body Leakage, Forward V GS = 20 V, VDS = 0 V 100 nA I GSSR Gate - Body Leakage, Reverse V GS = -20 V, VDS= 0 V -100 nA ON CHARACTERISTICS (Note 2) ∆V GS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient I D = 250 µA, Referenced to 25 oC -4.5 mV / oC V GS(th) Gate Threshold Voltage V DS = VGS, ID = 250 µA 1 1.6 3 V T J =125°C 0.8 1.3 2.4 R DS(ON) Static Drain-Source On-Resistance V GS = 10 V, I D = 12.5 A 0.008 0.0095 Ω T J =125°C 0.012 0.016 V GS = 4.5 V, I D = 10.5 A 0.0105 0.013 I D(ON) On-State Drain Current V GS = 10 V, VDS = 5 V 25 A g FS Forward Transconductance V DS = 15 V, I D= 12.5 A 35 S DYNAMIC CHARACTERISTICS C iss Input Capacitance V DS = 15 V, VGS = 0 V, f = 1.0 MHz 2180 pF C oss Output Capacitance 500 pF C rss Reverse Transfer Capacitance 255 pF SWITCHING CHARACTERISTICS (Note 2) t D(on) Turn - On Delay Time V DS= 10 V, I D= 1 A 13 24 ns t r Turn - On Rise Time V GS = 10 V , RGEN = 6 Ω 14 26 ns t D(off) Turn - Off Delay Time 43 70 ns t f Turn - Off Fall Time 15 27 ns Q g Total Gate Charge V DS = 15 V, I D = 12.5 A, 23 33 nC Q gs Gate-Source Charge V GS= 5 V 7 nC Q gd Gate-Drain Charge 11 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS I S Maximum Continuous Drain-Source Diode Forward Current 2.1 A V SD Drain-Source Diode Forward Voltage V GS = 0 V, IS = 2.1 A (Note 2) 0.72 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. Si4822DY Rev.A c. 125 OC/W on a 0.006 in2 pad of 2oz copper. b. 105 OC/W on a 0.04 in2 pad of 2oz copper. a. 50 OC/W on a 1 in2 pad of 2oz copper. |
Podobny numer części - SI4822 |
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Podobny opis - SI4822 |
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