SMBJ5.0A thru SMBJ188CA

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Vishay General Semiconductor

Revision: 29-May-13

1

Document Number: 89284

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Transient Voltage Suppressors

TYPICAL APPLICATIONS

Use in sensitive electronics protection against voltage

transients induced by inductive load switching and lighting

on ICs, MOSFET, signal lines of sensor units for consumer,

computer, industrial, and telecommunication.

DEVICES FOR BI-DIRECTION APPLICATIONS

For

bi-directional

use

CA

suffix

(e.g.

SMBJ10CA).

Electrical characteristics apply in both directions.

FEATURES

• Low profile package

• Ideal for automated placement

• Glass passivated chip junction

• Available in uni-directional and bi-directional

• 600 W peak pulse power capability with a

10/1000 μs waveform, repetitive rate (duty cycle): 0.01 %

• Excellent clamping capability

• Very fast response time

• Low incremental surge resistance

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Material categorization: For definitions of compliance

MECHANICAL DATA

Case: DO-214AA (SMBJ)

Molding compound meets UL 94 V-0 flammability rating

Base

P/N-M3

-

halogen-free,

RoHS-compliant,

and

commercial grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test

Polarity: For uni-directional types the band denotes

cathode end, no marking on bi-directional types

Notes

PRIMARY CHARACTERISTICS

6.4 V to 231 V

6.4 V to 231 V

5.0 V to 188 V

600 W

100 A

150 °C

Polarity

Uni-directional, bi-directional

Package

DO-214AA (SMBJ)

DO-214AA (SMB J-Bend)

PARAMETER

SYMBOL

VALUE

UNIT

Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)

600

W

Peak pulse current with a 10/1000 μs waveform

See next table

A

Peak forward surge current 8.3 ms single half sine-wave uni-directional only

100

A

Operating junction and storage temperature range

- 55 to + 150

°C