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AD677TD883B Arkusz danych(PDF) 10 Page - Analog Devices

Numer części AD677TD883B
Szczegółowy opis  MICROCIRCUIT, DIGITAL-LINEAR, FAST, SERIAL, 16-BIT, A/D CONVERTER, MULTICHIP SILICON
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Strona internetowa  http://www.analog.com
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AD677TD883B Arkusz danych(HTML) 10 Page - Analog Devices

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STANDARD
MICROCIRCUIT DRAWING
SIZE
A
5962-95592
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
REVISION LEVEL
A
SHEET
10
DSCC FORM 2234
APR 97
TABLE II. Electrical test requirements.
Test requirements
Subgroups
(in accordance with
MIL-STD-883,
method 5005, table I)
Subgroups
(in accordance with
MIL-PRF-38535, table III)
Device
class M
Device
class Q
Device
class V
Interim electrical
parameters (see 4.2)
1
1
1
Final electrical
parameters (see 4.2)
1,2,3,4,5,6,
1/
9,10,11
1,2,3,4,5,6, 1/
9,10,11
1,2,3,4,5, 1/
6,9,10,11
Group A test
requirements (see 4.4)
1,2,3,4,5,6,
9,10,11
1,2,3,4,5,6,
9,10,11
1,2,3,4,5,6,
9,10,11
Group C end-point electrical
parameters (see 4.4)
1
1
1,2,3,4,5,6,
9,10,11
Group D end-point electrical
parameters (see 4.4)
1
1
1,4,9
Group E end-point electrical
parameters (see 4.4)
1
1
1,4,9
1/ PDA applies to subgroup 1.
4.4.2 Group C inspection. The group C inspection end-point electrical parameters shall be as specified in table II herein.
4.4.2.1 Additional criteria for device class M. Steady-state life test conditions, method 1005 of MIL-STD-883:
a.
Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision level
control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method
1005 of MIL-STD-883.
b.
TA = +125
°C, minimum.
c.
Test duration: 1,000 hours, except as permitted by method 1005 of MIL-STD-883.
4.4.2.2 Additional criteria for device classes Q and V. The steady-state life test duration, test condition and test temperature,
or approved alternatives shall be as specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The
test circuit shall be maintained under document revision level control by the device manufacturer's TRB in accordance with
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify
the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test method 1005 of
MIL-STD-883.
4.4.3 Group D inspection. The group D inspection end-point electrical parameters shall be as specified in table II herein.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein).
a.
End-point electrical parameters shall be as specified in table II herein.
b.
For device classes Q and V, the devices or test vehicle shall be subjected to radiation hardness assured tests as
specified in MIL-PRF-38535 for the RHA level being tested. For device class M, the devices shall be subjected to
radiation hardness assured tests as specified in MIL-PRF-38535, appendix A for the RHA level being tested. All
device classes must meet the postirradiation end-point electrical parameter limits as defined in table I at
TA = +25
°C ±5°C, after exposure, to the subgroups specified in table II herein.
c.
When specified in the purchase order or contract, a copy of the RHA delta limits shall be supplied.


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