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2SA1020-Y Arkusz danych(PDF) 4 Page - Toshiba Semiconductor

Numer części 2SA1020-Y
Szczegółowy opis  TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SA1020-Y Arkusz danych(HTML) 4 Page - Toshiba Semiconductor

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2SA1020
2010-11-09
4
Base-emitter voltage VBE (V)
IC – VBE
Ambient temperature Ta (°C)
PC – Ta
Collector-emitter voltage VCE (V)
Safe Operating Area
0
0
Common emitter
VCE = −2 V
25
−55
Ta
= 100°C
−2.0
−0.4
−0.8
−1.2
−1.6
−2.0
−0.5
−1.0
−1.5
0
0
40
80
120
160
200
240
200
400
1000
600
800
*: Single nonrepetitive pulse
Ta
= 25°C
Curves must be derated linearly
with increase in temperature.
−0.01
−0.1
−5
IC max (pulsed)*
VCEO max
1 ms*
10 ms*
100 ms*
DC operation
Ta
= 25°C
−30
−100
−5
−10
−1
−3
−0.03
−0.05
−0.1
−0.3
−0.5
−1
−3
−50
1 s*
−0.5
−0.3
IC max (continuous)


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