SZSMS24CT1G datasheet(2/5 Pages) ONSEMI

Numer części	SZSMS24CT1G

Szczegółowy opis	5-Line Transient Voltage Suppressor Array

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SMS05C, SMS12C, SMS15C, SMS24C

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SMS05C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

(Note 2)

5.0

V

Breakdown Voltage

VBR

IT = 1.0 mA (Note 3)

6.2

7.2

V

Reverse Leakage Current

IR

VRWM = 5.0 V

5.0

mA

Clamping Voltage

VC

IPP = 5.0 A (8

20 ms Waveform)

9.8

V

Clamping Voltage

VC

IPP = 24 A (8

20 ms Waveform)

14.5

V

Maximum Peak Pulse Current

IPP

8

20 ms Waveform

24

A

Capacitance

CJ

VR = 0 V, f = 1.0 MHz (Line to GND)

260

400

pF

SMS12C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

(Note 2)

12

V

Breakdown Voltage

VBR

IT = 1.0 mA (Note 3)

13.3

15

V

Reverse Leakage Current

IR

VRWM = 12 V

0.001

1.0

mA

Clamping Voltage

VC

IPP = 5.0 A (8

20 ms Waveform)

19

V

Clamping Voltage

VC

IPP = 15 A (8

20 ms Waveform)

23

V

Maximum Peak Pulse Current

IPP

8

20 ms Waveform

15

A

Capacitance

CJ

VR = 0 V, f = 1.0 MHz (Line to GND)

120

150

pF

SMS15C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified) (See Note 4)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

(Note 2)

15

V

Breakdown Voltage

VBR

IT = 1.0 mA (Note 3)

17

19

V

Reverse Leakage Current

IR

VRWM = 15 V

0.05

1.0

mA

Clamping Voltage

VC

IPP = 5.0 A (8

20 ms Waveform)

24

V

Clamping Voltage

VC

IPP = 12 A (8

20 ms Waveform)

29

V

Maximum Peak Pulse Current

IPP

8

20 ms Waveform

12

A

Capacitance

CJ

VR = 0 V, f = 1.0 MHz (Line to GND)

95

125

pF

SMS24C ELECTRICAL CHARACTERISTICS (TJ = 25°C, unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

(Note 2)

24

V

Breakdown Voltage

VBR

IT = 1.0 mA (Note 3)

26.7

32

V

Reverse Leakage Current

IR

VRWM = 24 V

0.001

1.0

mA

Clamping Voltage

VC

IPP = 5.0 A (8

20 ms Waveform)

40

V

Clamping Voltage

VC

IPP = 8 A (8

20 ms Waveform)

44

V

Maximum Peak Pulse Current

IPP

8

20 ms Waveform

8.0

A

Capacitance

CJ

VR = 0 V, f = 1.0 MHz (Line to GND)

60

75

pF

2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC

or continuous peak operating voltage level.

3. VBR is measured at pulse test current IT.

4. Parametrics are the same for the Pb−Free packages, which are suffixed with a “G’’.

Podobny numer części - SZSMS24CT1G

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ON Semiconductor	SZSM05T1G	96Kb / 5P	Transient Voltage Suppressor Diode Array October, 2016 ??Rev. 7
Littelfuse	SZSMF10AT1G	1Mb / 6P	SZSMF30AT1G Surface Mount > 200W > SZSMF Series Revised: 06/20/19
	SZSMF11AT1G	1Mb / 6P	SZSMF30AT1G Surface Mount > 200W > SZSMF Series Revised: 06/20/19
	SZSMF12AT1G	1Mb / 6P	SZSMF30AT1G Surface Mount > 200W > SZSMF Series Revised: 06/20/19
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Podobny opis - SZSMS24CT1G

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ON Semiconductor	SMF05CT1G	133Kb / 4P	5-Line Transient Voltage Suppressor Array February, 2012 ??Rev. 4
	SMS05C	112Kb / 6P	5-Line Transient Voltage Suppressor Array February, 2005 ??Rev. 5
	SMS05C	167Kb / 5P	5-Line Transient Voltage Suppressor Array October, 2011 ??Rev. 7
	SMF05C	59Kb / 4P	5-Line Transient Voltage Suppressor Array June, 2004 ??Rev. 1
WILLAS ELECTRONIC CORP	SEMFXXC	297Kb / 3P	5-Line Transient Voltage Suppressor Array
ON Semiconductor	SMS05CT1G	167Kb / 5P	5-Line Transient Voltage Suppressor Array October, 2011 ??Rev. 7
WILLAS ELECTRONIC CORP	SESMF05C	293Kb / 4P	5-Line Transient Voltage Suppressor Array
ON Semiconductor	NUP5150MU	89Kb / 4P	5-Line Transient Voltage Suppressor Array September, 2007 - Rev. 0
Bruckewell Technology L...	ESMFXX	468Kb / 4P	4-Line Transient Voltage Suppressor Array
WILLAS ELECTRONIC CORP	SEMF05	391Kb / 4P	4-Line Transient Voltage Suppressor Array

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